Taiwan researchers engineer interface only 0.42 nm thick to improve next-gen MoS2 transistors

Researchers from National Yang Ming Chiao Tung University and TSMC have developed a new interface design for atomically thin transistors. They created a 0.42-nanometre aluminium oxide layer between monolayer MoS2…

Continue ReadingTaiwan researchers engineer interface only 0.42 nm thick to improve next-gen MoS2 transistors